PART |
Description |
Maker |
3N142 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
|
ETC[ETC]
|
3N187 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR
|
Vaishali Semiconductor
|
GT40G121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
GT15Q311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
MGY25N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP14N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MMG05N60D_D ON2233 MMG05N60D |
Insulated Gate Bipolar Transistor From old datasheet system N-hannel Enhancement-ode Silicon Gate
|
ONSEMI[ON Semiconductor]
|
APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp. Microsemi Corporation
|
GT40T301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
GT40T302 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
Toshiba Semiconductor
|
GT30J121 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
GT80J101B |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|